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关注：1
2013-05-23 12:21
求翻译：但是与Si面生长情况比较，减小幅度较快。这一结果说明，在C面上生长的Si薄膜在晶格稳定性上要大于在Si面上生长的Si薄膜。是什么意思？ 待解决
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- 离问题结束还有
但是与Si面生长情况比较，减小幅度较快。这一结果说明，在C面上生长的Si薄膜在晶格稳定性上要大于在Si面上生长的Si薄膜。
问题补充： |
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2013-05-23 12:21:38
However, comparison with the growth of the si face, reducing the amplitude faster. These results suggest that, si thin film growth in the c plane in the lattice stability is greater than the growth of si surface si film.
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2013-05-23 12:23:18
But with the growth of Si compared to a smaller extent. This shows that the growth of C Si on film on the wafer to be greater than the stability in Si Si on the film growth.
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2013-05-23 12:24:58
But compares with the Si surface growth situation, reduces the scope to be quick.This result showed that, grows the Si thin film on C to have to be bigger than the Si thin film in the crystal lattice stability which grows on the Si surface.
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2013-05-23 12:26:38
However, compared with growth of Si surface, reduces more quickly. This results, in c on the surface growth of Si thin films on lattice stability than growth of Si thin films on Si surface.
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2013-05-23 12:28:18
正在翻译，请等待...
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