求翻译：进一步证实了Si薄膜与SIC衬底的外延关系。为了更好的观察异质结的周期性信息和匹配关系，我们对傅里叶变化花样进行处理，去除了SiC衬底和Si薄膜的中偶然出现的堆垛层错和孪晶等非周期性信息。Si薄膜（1区）、SiC衬底（2区）和异质结界面（3区）FFT处理后的图分别如图所示。由图可知，Si薄膜与6H-SIC衬底分别具有明显的FFC和6H结构特征，其面间距分别为3.21Å和2.57Å.是什么意思？

Si film and the SiC substrate further confirmed the epitaxial relationship. In order to better observe the periodic information and the matching relationship of the heterojunction, the Fourier transform pattern for processing, in addition to the occasional stacking fault a sic substrate and si film

Further confirmation of the thin film and Si SIC backing the extension. In order to better observe the heterogeneity and periodic information to match, we have a variety of changes to the IP address, in addition to SiC Si film backing and the occasional mistake layer stack, such as Crystal and its n

Further confirmed the Si thin film and th

Further confirmed the Si thin-film epitaxy of SIC substrates. In order to better observe the heterojunction of periodic information and matching relationship we Fourier change pattern, removal of the SiC substrates and occasional stacking fault in Si thin films He Luanjing non-recurring information,