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关注：1
2013-05-23 12:21
求翻译：It appears that PtSi was generated with the migration of Pt into the MoSi2 thin film, as described in Section 3.2. The resistance of the thin film, where PtSi was formed,was lower than that at the center of the MoSi2 thin film because of the semiconductor-like property of the resistance, which decreased at higher tempe是什么意思？ 待解决
 悬赏分：1
- 离问题结束还有
It appears that PtSi was generated with the migration of Pt into the MoSi2 thin film, as described in Section 3.2. The resistance of the thin film, where PtSi was formed,was lower than that at the center of the MoSi2 thin film because of the semiconductor-like property of the resistance, which decreased at higher tempe
问题补充： |
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2013-05-23 12:21:38
正在翻译，请等待...
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2013-05-23 12:23:18
看来PtSi引起了与Pt的迁移入MoSi2薄膜，正如第3.2部分所描述。薄膜的抵抗， PtSi被形成，低于那在MoSi2薄膜的中心由于抵抗的象半导体的物产，减少在高温。
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2013-05-23 12:24:58
看起来PtSi在第3.2部分引起了以Pt的迁移入MoSi2薄膜，如所描述。 抵抗薄膜， PtSi被形成了的地方，低于那在MoSi2的中心薄膜由于半导体象抵抗的物产，减少在高温。
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2013-05-23 12:26:38
看来 PtSi 生成与 Pt 迁移到 MoSi2 薄膜，如 3.2 节中所述。薄膜，被形成了 PtSi，抵抗低于在 MoSi2 薄膜由于具有抵抗的半导体类似属性的中心，而减少在更高的温度。
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2013-05-23 12:28:18
ptsi似乎产生了迁移的pt的MOSI2薄膜,如一节中所述3.2。 的电阻薄膜,ptsi是形成了,是低于该中心的MOSI2薄膜由于半导体的物业一样的阻力,减少在较高的温度。
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