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关注：1
2013-05-23 12:21
求翻译：The generation of a well-ordered one-bilayer step-terrace structure on both of the polished Si face and C face was confirmed by atomic force microscopy (AFM). However, due to the high temperature of thermal-oxidation, many pits were generated on SiC-C face after polishing.是什么意思？ 待解决
 悬赏分：1
- 离问题结束还有
The generation of a well-ordered one-bilayer step-terrace structure on both of the polished Si face and C face was confirmed by atomic force microscopy (AFM). However, due to the high temperature of thermal-oxidation, many pits were generated on SiC-C face after polishing.
问题补充： |
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2013-05-23 12:21:38
同时在抛光Si面和C面的良好有序1 -双层台阶 - 台面结构的产生是由原子力显微镜（AFM）证实。
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2013-05-23 12:23:18
一个秩序井然one-bilayer步大阳台结构的一代在两个的优美的Si面孔和C面孔由原子力量显微学(AFM)证实。然而，由于高温热量氧化作用，许多坑在SicC面孔引起了在擦亮以后。
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2013-05-23 12:24:58
正在翻译，请等待...
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2013-05-23 12:26:38
良序的一双层步阶结构对抛光的硅脸和 C 面代证实了原子力显微镜 （AFM）。然而，因热氧化温度高，许多坑被上生成碳化硅 C 面抛光后。
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2013-05-23 12:28:18
一种好地订购一个双分子层继叠层式的结构的一代上两个擦亮 Si 面对和 C 面对被原子的力量显微镜方法确认 (AFM)。然而，由于热氧化的高温度，很多坑在 SiC-C 被生成面对擦亮后。
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