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关注：1
2013-05-23 12:21
求翻译：Highly oriented pyrolytic graphite substrates with fresh cleaved surfaces were first etched by O2-plasma at 90 C with plasma power of 120 W for around 30 s to introduce dense dot defects in the topmost layer. In order to view these defects directly, we enlarged them into small pits with size of 10–20 nm with hydroge是什么意思？ 待解决
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- 离问题结束还有
Highly oriented pyrolytic graphite substrates with fresh cleaved surfaces were first etched by O2-plasma at 90 C with plasma power of 120 W for around 30 s to introduce dense dot defects in the topmost layer. In order to view these defects directly, we enlarged them into small pits with size of 10–20 nm with hydroge
问题补充： |
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2013-05-23 12:21:38
高定向热解石墨基材的新鲜切割面都在？ 90 ？ C时， 120瓦左右30秒等离子电源引入的最上面一层致密的点缺陷的第一蚀刻O2等离子体。
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2013-05-23 12:23:18
正在翻译，请等待...
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2013-05-23 12:24:58
高度针对的高温分解的石墨基体与新被劈开的表面由O2血浆在最上面的层数首先铭刻在 90 C以血浆力量的120 W为大约30 s介绍密集的小点瑕疵。 而蚀刻仅发生在边缘在瑕疵附近，为了直接地观看这些瑕疵，我们扩大他们 (入) 小坑以大小的10-20毫微米与氢H2血浆在 525 C以血浆力量的100 W在10分钟。
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2013-05-23 12:26:38
具有新鲜切割表面的高定向热解石墨基底第一次刻 O2 等离子体在 90 ℃ 用等离子电源 120 W 的大约 30 s 引入密集点缺陷在顶部图层。若要查看这些缺陷直接，我们出来放大成小坑，大小为 10 – 20 毫微米与氢气 （H2） 血浆 525 ℃ 用等离子电源的 100 W 为 10 分钟，虽然只在围绕缺陷边缘刻蚀时发生。
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2013-05-23 12:28:18
Highly oriented pyrolytic graphite substrates with fresh cleaved surfaces were first etched by O2-plasma at 90 C with plasma power of 120 W for around 30 s to introduce dense dot defects in the topmost layer.In order to view these defects directly, we enlarged them into small pits with size of 10
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