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关注：1
2013-05-23 12:21
求翻译：Also, it was found that the composition of the oxide layer included silicon oxide(SiO2) as well as a transition layer: silicon oxycarbide(Si-C-O), which was located at interface between SiO2 and SiC. It was experimentally proved that although silicon oxycarbide could not be removed by dipping in HF solution, it could b是什么意思？ 待解决
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Also, it was found that the composition of the oxide layer included silicon oxide(SiO2) as well as a transition layer: silicon oxycarbide(Si-C-O), which was located at interface between SiO2 and SiC. It was experimentally proved that although silicon oxycarbide could not be removed by dipping in HF solution, it could b
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2013-05-23 12:21:38
此外，人们发现，在氧化物层的组合物包括氧化硅（SiO 2 ），以及一个过渡层：碳氧化硅（ Si-Co系），将其设在二氧化硅和碳化硅之间的接口。
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2013-05-23 12:23:18
正在翻译，请等待...
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2013-05-23 12:24:58
并且，它被发现氧化物层数的构成包括氧化硅(SiO2) 并且转变层： 硅oxycarbide( SiC O)，位于SiO2和SiC之间的接口。 它实验性地证明，虽然硅oxycarbide不可能被浸洗去除在HF解答，它可能被擦亮去除使用某软的研磨剂例如铈氧化物 (CeO2) (5)。
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2013-05-23 12:26:38
此外，它被发现的氧化层的组成包括硅 oxide(SiO2)），可作为过渡层： 硅 oxycarbide(Si-C-O)，位于当时 SiO2 和碳化硅之间的接口。实验证明虽然硅正不能删除由 HF 溶液中浸洗，它可以通过一些软磨料氧化铈 (CeO2) 等都可用于抛光删除 [5]。
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2013-05-23 12:28:18
正在翻译，请等待...
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