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关注：1
2013-05-23 12:21
求翻译：After plasma irradiation, this surface became very rough due to the volumetric expansion in the oxidation process. Although these surfaces were very rough, pits which were resulted from dislocations in the bulk SiC were not found. Dry thermal-oxidation was also conducted on SiC-Si faces.是什么意思？ 待解决
 悬赏分：1
- 离问题结束还有
After plasma irradiation, this surface became very rough due to the volumetric expansion in the oxidation process. Although these surfaces were very rough, pits which were resulted from dislocations in the bulk SiC were not found. Dry thermal-oxidation was also conducted on SiC-Si faces.
问题补充： |
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2013-05-23 12:21:38
等离子体照射后，该表面变得非常粗糙，由于在氧化过程中的体积膨胀。
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2013-05-23 12:23:18
在等离子辐照区域以后，这表面在氧化作用过程中成为了非常粗砺由于容量扩展。虽然这些表面是非常粗砺的，起因于在大块SiC的脱臼未找到的坑。干燥热量氧化作用在SiC Si面孔也被举办了。
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2013-05-23 12:24:58
在血浆辐照区域以后，这表面在氧化作用过程中成为了非常粗砺由于容量扩展。 虽然这些表面是非常粗砺的，在大块SiC起因于脱臼的坑未被发现。 干燥热量氧化作用在SiCSi面孔也被举办了。
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2013-05-23 12:26:38
等离子体辐照后这种表面变得非常粗糙由于氧化过程中的体积膨胀。虽然这些表面很粗糙，坑造成的位错的散装碳化硅均未发现。干热氧化也进行碳化硅-硅脸上的表情。
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2013-05-23 12:28:18
在血浆发光之后，这个表面由于在氧化过程中的 volumetric 扩展变得很粗略的。虽然这些表面是很粗略的，由于的坑在容积的 SiC 的变位未找到。干热氧化也在电容率-Si 上被进行面对。
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