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关注：1
2013-05-23 12:21
求翻译：The polishing conditions are shown in Table II. Although colloidal silica slurry was widely used for CMP of the Si faces of 4H-SiC substrates, we used CeO2 as the abrasive material because the surfaces to be polished were not SiC but SiO2 and CeO2 was proved very efficient for the polishing of SiO2-based material such 是什么意思？ 待解决
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The polishing conditions are shown in Table II. Although colloidal silica slurry was widely used for CMP of the Si faces of 4H-SiC substrates, we used CeO2 as the abrasive material because the surfaces to be polished were not SiC but SiO2 and CeO2 was proved very efficient for the polishing of SiO2-based material such
问题补充： |
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2013-05-23 12:21:38
抛光条件示于表Ⅱ。
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2013-05-23 12:23:18
擦亮的条件在表II.显示。虽然胶质硅土泥浆为4H Sic基体的Si面孔的CMP是用途广泛，我们使用了CeO2作为研磨材料，因为将被擦亮的表面不是SiC，而是SiO2和CeO2擦亮的是被证明的非常高效率的基于SiO2的材料例如玻璃[6]。
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2013-05-23 12:24:58
正在翻译，请等待...
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2013-05-23 12:26:38
抛光条件表二所示。虽然胶体硅浆被广泛用于 CMP 4h 碳化硅衬底的 Si 面孔，我们用作 CeO2 研磨材料因为被抛光的表面没有 SiC 但 SiO2 和 CeO2 被证明非常有效的抛光 SiO2 基础的材料，如玻璃 [6]。事实上，CeO2 磨料磨具已被证明是非常有益的拼合寺的面孔和 C 面 4 H-碳化硅，即使没有预氧化过程的。人们以为 CeO2 磨料磨具与实现表面平坦的碳化硅衬底的碳化硅之间发生的化学反应。这种假设会在我们未来的研究证实。
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2013-05-23 12:28:18
正在翻译，请等待...
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