|
关注：1
2013-05-23 12:21
求翻译：The reason is that the chemical and mechanical properties of Si face and C face are different; therefore the ideal abrasives for flattening of Si faces may not be suitable for flattening of C faces. Just as the Si face of 4H-SiC substrates, we think that the C faces can also be flattened efficiently by surface oxidatio是什么意思？ 待解决
 悬赏分：1
- 离问题结束还有
The reason is that the chemical and mechanical properties of Si face and C face are different; therefore the ideal abrasives for flattening of Si faces may not be suitable for flattening of C faces. Just as the Si face of 4H-SiC substrates, we think that the C faces can also be flattened efficiently by surface oxidatio
问题补充： |
|
2013-05-23 12:21:38
其原因是， Si面和C面的化学和机械性能是不同的;
|
|
2013-05-23 12:23:18
正在翻译，请等待...
|
|
2013-05-23 12:24:58
原因是Si面孔和C面孔化工和机械性能是不同的; 因此理想的研磨剂为铺平Si面孔可能不是适当的为铺平C面孔。 正4H-SiC基体的Si面孔，我们认为C面孔可能通过表面氧化作用和磨蚀擦亮高效率地也铺平，因为C面孔是更加容易被氧化。 C面孔、正极氧化作用、血浆氧化作用和热量氧化作用的氧化作用方法在研究中。 作为一项初步研究，热量氧化作用的应用结果和磨蚀擦亮SiC-C面孔在本文被谈论了。
|
|
2013-05-23 12:26:38
正在翻译，请等待...
|
|
2013-05-23 12:28:18
正在翻译，请等待...
|
湖北省互联网违法和不良信息举报平台 | 网上有害信息举报专区 | 电信诈骗举报专区 | 涉历史虚无主义有害信息举报专区 | 涉企侵权举报专区
