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关注：1
2013-05-23 12:21
求翻译：The polysilicon thickness was about 5000Å, the low doped polysilicon was implanted with boron to a concentration of 1.10l6 cm-3 and the n-well had a surface concentration of about 1.10l6 cm-3 with a depth of about 5μm是什么意思？ 待解决
 悬赏分：1
- 离问题结束还有
The polysilicon thickness was about 5000Å, the low doped polysilicon was implanted with boron to a concentration of 1.10l6 cm-3 and the n-well had a surface concentration of about 1.10l6 cm-3 with a depth of about 5μm
问题补充： |
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2013-05-23 12:21:38
多晶硅的厚度约为5000埃，该低掺杂多晶硅植入硼的1.10l6厘米-3和n阱的浓度为约1.10l6 cm -3的表面浓度为约5微米的深度
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2013-05-23 12:23:18
正在翻译，请等待...
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2013-05-23 12:24:58
polysilicon厚度是关于5000Å，低被掺杂的polysilicon种入了与硼到1.10l6 cm的集中3，并且n-well大约有1.10l6 cm的表面集中3以深度的大约5μm
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2013-05-23 12:26:38
多晶硅厚度是关于 5000Å、 低掺杂多晶硅被植入了硼浓度的 1.10l6 厘米 3 和 n 井曾与深度约 5 μ m 1.10l6 厘米 3 的表面浓度
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2013-05-23 12:28:18
正在翻译，请等待...
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