求翻译：但是CVD和MBE法只能在高溫下成長，這將使得基板材料受到限制再加上晶粒太大、表面粗糙兩項缺點,將無法輕易在薄膜上製作電極。是什么意思？

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However CVD and MBE is only available in high temperatures, which will enable base material is restricted and chipset 粒 is too large, surface rough two options disadvantages, will not be easily on film produce electrodes.

But CVD and the MBE law only can grow under the high temperature, this will cause the foundation plate material to be restricted to add on the crystal again 粒 in a big way too, the surface roughness 兩 shortcoming, will be unable easily to manufacture the electrode on the thin film.

MBE and CVD can only grow at high temperatures, this will make the base material is restricted along with grains is too big, rough surface two drawbacks, you cannot easily making electrodes on the film.

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