求翻译：證實矽晶片上有完整的石墨烯後,通過 DC 磁控濺鍍進行氮化鋁的生長,我們實驗中採用高純度4N 2吋鋁靶和高純度的氬氣和氮氣作為反應氣體，然後在400℃,壓力8mtorr功率250W和氮氣濃度40%進行濺鍍,進行濺鍍時間為3小時，再以XRD分析AlN薄膜。是什么意思？

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The silicon chip on a full graphite after 烯, pass DC disk-on chrome for 氮化 aluminum growth, we lab with the High purity 4N 2 inch aluminum surfaces and High purity argon gas and nitrogen as reactive gas and at 400°C, pressure 8mtorr power 250W and nitrogen gas concentration 40% for onto chrome, for

On after the confirmation xi chip has the integrity graphite alkene, controls through the DC magnetism splashes plates carries on the aluminium nitride the growth, we test use the high-purity 4N 2 吋 aluminum targets and the high-purity argon and the nitrogen took the response gas, then in 400℃, pres

Confirmed silicon chip Shang has full of graphite en Hou, through DC magnetic control splash plating for nitride aluminum of growth, we experiment in the used high purity 4N 2 inches aluminum target and high purity of argon gas and nitrogen as reaction gas, then in 400 ℃, pressure 8mtorr power 250W

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