求翻译：證實矽晶片上有完整的石墨烯存在,之後通過 DC 磁控濺鍍進行氮化鋁的生長.時，再以XRD分析AlN薄膜。我們實驗中採用高純度4N 2吋鋁靶和高純度的氬氣和氮氣作為反應氣體，然後在400℃,壓力8mtorr功率250W和氮氣濃度40%進行濺鍍,進行濺鍍時間為3小時，最後再以XRD分析AlN薄膜。是什么意思？

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The silicon chip on a full graphite 烯 exists, then passed DC disk-on chrome for 氮化 aluminum growth., and then to XRD analysis ALN membrane. We lab with the High purity 4N 2 inch aluminum surfaces and High purity argon gas and nitrogen as reactive gas and at 400°C, pressure 8mtorr power 250W and nitr

On the confirmation xi chip has the integrity graphite alkene existence, afterwards controls through the DC magnetism splashes plates carries on the aluminium nitride the growth. When, again analyzes the AlN thin film by XRD.We test use the high-purity 4N 2 吋 aluminum targets and the high-purity arg

Confirm complete Graphene on silicon chips, aluminum nitride by DC magnetron sputtering after growth. and then to XRD analysis of AlN thin films. In our experiment using high purity 4N 2-inch aluminum and high purity argon and nitrogen gas, and 400 ℃, pressure 8mtorr 40% power 250W and nitrogen conc

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