求翻译：我們實驗中採用高純度4N 2吋 鋁靶和高純度的氬氣和氮氣作為反應氣體，在溫度400℃,壓力8mtorr及功率250W和氮氣濃度40%,濺鍍時間為3小時進行濺鍍，最後再以XRD分析AlN薄膜。是什么意思？

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We lab with the High purity 4N 2 inch aluminum surfaces and High purity argon gas and nitrogen as reactive gas, in the temperature 400°C, pressure 8mtorr and power 250W and nitrogen gas concentration 40%, onto a time of 3 hours on Chrome, and finally to XRD analysis ALN membrane.

We test use the high-purity 4N 2 吋 aluminum targets and the high-purity argon and the nitrogen took the response gas, in the temperature 400℃, pressure 8mtorr and power 250W and the nitrogen density 40%, splashes plates the time is 3 hours carries on splashes plates, finally analyzes the AlN thin fi

In our experiment using high purity 4N 2-inch aluminum and high purity argon and nitrogen gas, at a temperature of 400 degrees Celsius, 8mtorr and 40% power 250W and nitrogen concentration, sputter sputtering time is 3 hours, and finally to XRD analysis of AlN thin films.

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