求翻译：我們實驗中採用高純度4N 2吋 鋁靶和高純度的氬氣和氮氣作為反應氣體，在氮氣濃度40%溫度400℃,壓力8mtorr功率250W,濺鍍時間為3小時進行薄膜的生長，最後再以XRD分析AlN薄膜。是什么意思？

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We lab with the High purity 4N 2 inch aluminum surfaces and High purity argon gas and nitrogen as reactive gas to the nitrogen gas concentration 40% temperature 400°C, pressure 8mtorr power 250W, onto a time of 3 hours on film growth, and finally to XRD analysis ALN membrane.

We test use the high-purity 4N 2 吋 aluminum targets and the high-purity argon and the nitrogen took the response gas, in the nitrogen density 40% temperature 400℃, pressure 8mtorr power 250W, splashes plates the time is 3 hours carries on the thin film the growth, finally analyzes the AlN thin film

In our experiment using high purity 4N 2-inch aluminum and high purity argon and nitrogen as gas in nitrogen concentration of 40% temperature 400 ℃, pressure 8mtorr power 250W, sputtered film growth time is 3 hours, and finally to XRD analysis of AlN thin films.

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