求翻译：一般在1000℃的条件下保温保压30min后淬冷发生完全合金化未掺杂的β-FeSi2是P型半导体，而掺杂可以使载流子的浓度增大，降低材料的电阻率。是什么意思？

Generally at 1000 ℃ under the conditions of thermal quenching packing occurred after 30min completely undoped alloy is a P-type β-FeSi2 semiconductor, and doping can make the carrier concentration increases, the lower resistivity of the material.

Generally speaking, in 1000 under the conditions of the °C insulated dwelling 30 min after full alloy of quenching cold occurred not adulterated with beta-FeSi P Semiconductor is 2, and can be mixed with the carrier to lower increase in the concentration of the resistivity of the material.

Generally after 1000℃ the condition keeps warm guarantees presses 30min to quench has the complete alloy doping β-FeSi 2 has not been the P semiconductor, but dopes may cause the current carrier the density to increase, reduces material the electronic resistivity.

General conditions of 1000 degrees Celsius after a 30min of insulation quenched completely alloy doped β-FeSi2 is p-type semiconductor, and doped allows a carrier concentration increases, reducing the resistivity of the material.

Generally at 1000 ℃ under the conditions of thermal quenching packing occurred after 30min completely undoped alloy is a P-type β-FeSi2 semiconductor, and doping can make the carrier concentration increases, the lower resistivity of the material.