求翻译：所述高阻材料层的阻值至少为所述相变材料层的阻值的十倍以上，可以避免相变材料层在化学机械抛光工艺中过度腐蚀的现象，提高相变存储单元的存储性能和成品率。是什么意思？

Described the resistance high resistance material layer at least above the resistance phase-change material layer more than ten times, to avoid phase-change material layer in chemical mechanical polishing process in the phenomenon of excessive corrosion, improve phase-change memory cell storage perf

High resistance material layer as described in the deterrent value of at least as described in the phase change material layer 10 times higher than the deterrent value of Phase change material layer, you can avoid the chemical mechanical polishing process and enhance excessive corrosion of the Memor

States the highly-resistant material level the resistance number for to state at least changes the material level above resistance number ten times, may avoid changing the material level the phenomenon which corrodes excessively in chemistry machinery polishing craft, enhances changes the memory cel

Described resistance of high resistance materials at least phase change material layers of resistance described 10 times more than, can avoid chemical mechanical polishing phase change material layers in process of excessive corrosion phenomena, storage properties and yield increasing phase change s

Described resistance of high resistance materials at least phase change material layers of resistance described 10 times more than, can avoid chemical mechanical polishing phase change material layers in process of excessive corrosion phenomena, storage properties and yield increasing phase change s