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关注：1
2013-05-23 12:21
求翻译：The specific fabrication process is summarized as follows. (1) A (1 1 0) plane monocrystalline silicon wafer was chosen as substrate, whose thickness is 0.4 mm. (2) A SiO2 layers were grown on both sides of the substrate by thermal oxidation as electrical isolation layers. (3) By means of low pressure chemical vapor de是什么意思？ 待解决
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The specific fabrication process is summarized as follows. (1) A (1 1 0) plane monocrystalline silicon wafer was chosen as substrate, whose thickness is 0.4 mm. (2) A SiO2 layers were grown on both sides of the substrate by thermal oxidation as electrical isolation layers. (3) By means of low pressure chemical vapor de
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2013-05-23 12:21:38
具体的制作过程可以概括如下。 （1）（1 0）面单晶硅片被选定为基板，其厚度为0.4毫米。 （2）SiO2层上生长的衬底双方作为电气隔离层的热氧化。 （3）通过低压化学气相沉积（LPCVD），氮化硅层被沉积在基板的背面作为蚀刻掩模在KOH腐蚀。 （4）80纳米多晶硅纳米薄膜层沉积LPCVD的方式，在625°C的晶圆正面。 （5）为SiO2层沉积等离子增强化学气相沉积（PECVD）方法，它是用来调整在多晶硅纳米薄膜压阻掺杂浓度对多晶硅纳米薄膜层。 （6）样品进行了掺杂硼离子注入掺杂浓度大约是3.0×1020 cm-3的（即，最佳掺杂浓度）根据LSS理论[19]。 （7）为了激活的硼离子电，使掺杂
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2013-05-23 12:23:18
具体制作过程概述如下。 (1)a(110)平面单晶硅晶圆被选定为基材,其厚度为0.4mm。 (2)长大了sio2层两侧的
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2013-05-23 12:24:58
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2013-05-23 12:26:38
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2013-05-23 12:28:18
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