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关注:1
2013-05-23 12:21
求翻译:Furthermore, the significantly improved optical properties of this MQW using this AlN buffer technique were also demonstrated by increasing the thickness of the GaN layer underneath, whose crystal quality can be improved by increasing thickness, confirmed by detailed x-ray measurements是什么意思? 待解决
悬赏分:1
- 离问题结束还有
Furthermore, the significantly improved optical properties of this MQW using this AlN buffer technique were also demonstrated by increasing the thickness of the GaN layer underneath, whose crystal quality can be improved by increasing thickness, confirmed by detailed x-ray measurements
问题补充: |
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2013-05-23 12:21:38
此外,使用此AlN缓冲技术MQW显着改善的光学性质也表明增加的氮化镓层下的厚度,其厚度增加可以通过提高晶体质量,确认详细的X射线测量
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2013-05-23 12:23:18
此外,mqw大大改进的光学属性使用此aln缓冲区的这也表明了通过增加技术的的gan层厚度的下方,其晶体质量可以得到改善,增加厚度,确认详细的x射线测量
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2013-05-23 12:24:58
此外,这MQW显著改善的光学性能使用这个AlN缓冲技术通过在底下增加GaN层数的厚度也展示,水晶质量可以经过增加厚度改进,被证实由详细的X-射线测量
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2013-05-23 12:26:38
正在翻译,请等待...
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2013-05-23 12:28:18
此外,使用这项 AlN 缓冲器技术的这 MQW 的明显被提高的光学财产也被增强 GaN 层的厚度显示在下面,其水晶质量可以被增强被详细 x-ray 度量法确认的厚度改善
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