1.The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.
本文研究了直拉硅单晶的氧内吸杂(IG)工艺中,单晶的碳含量对缺陷形成的影响。
2.Rapid thermal process (RTP) was used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
将快速热处理(RTP)引入到快中子辐照掺氮直拉硅的内吸杂工艺中。
3.The polysilicon can enhance oxygen precipitation nucleating and growing, acting as the intrinsic gettering.
多晶硅能促进硅片内的氧沉淀成核和生长,起内吸杂作用。
4.As one of the key processes, phosphorous gettering treatment has been widely applied to improve the electrical properties of crystalline silicon which is the main photovoltaic material.
磷吸杂作为提升晶体硅材料性能的主要手段被广泛应用在太阳电池的生产工艺中。