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关注：1
2013-05-23 12:21
求翻译：Since by tying the NBL to the source terminal device is forced to operate in single RESURF mode the optimum drift length required to achieve a desired breakdown voltage is higher, hence the higher on-resistance of the device as opposed to the double RESURF case.是什么意思？ 待解决
 悬赏分：1
- 离问题结束还有
Since by tying the NBL to the source terminal device is forced to operate in single RESURF mode the optimum drift length required to achieve a desired breakdown voltage is higher, hence the higher on-resistance of the device as opposed to the double RESURF case.
问题补充： |
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2013-05-23 12:21:38
因为通过把NBL到源终端设备被强制在单RESURF模式操作，以实现期望的击穿电压所需要的最佳漂移长度为较高，因此较高的，而不是双重RESURF情况下，设备的导通电阻。
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2013-05-23 12:23:18
正在翻译，请等待...
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2013-05-23 12:24:58
因为通过栓NBL到源极引出线设备在唯一RESURF方式下被迫操作要求的最宜的漂泊长度达到期望击穿电压是高，因此设备的更高的在抵抗与双重RESURF事例相对。
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2013-05-23 12:26:38
正在翻译，请等待...
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2013-05-23 12:28:18
正在翻译，请等待...
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