求翻译：在我們的實驗氮化鋁薄膜生長使用高純度4N2英寸鋁靶和高純度的氬氣和氮氣作為反應氣體在氮氣濃度40％，溫度400℃，壓力8mtorr功率250W在時間3小時進行生長。是什么意思？

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In our lab 氮化 aluminum mylar growth with high purity 4N2" aluminum surfaces and High purity argon gas and nitrogen as reactive gas in the nitrogen gas concentration 40%, temperature 400°C, the pressure 8mtorr power 250W in time 3 hours for growth.

Uses the high-purity 4N2 inch aluminum target and the high-purity argon and the nitrogen in ours experimental aluminium nitride thin film growth took the response gas in the nitrogen density 40%, the temperature 400℃, pressure 8mtorr power 250W carries on the growth in the time 3 hours.

In our experimental growth of aluminum nitride thin films using high purity 4N2-inch aluminum and high purity argon and nitrogen as gas in nitrogen concentration of 40%, temperature 400 ℃, pressure 8mtorr power 250W grow in time 3 hours.

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